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| (R) BYW77G-200 HIGH EFFICIENCY FAST RECOVERY DIODES MAIN PRODUCT CHARACTERISTICS IF(AV) VRRM trr VF 25 A 200 V 50 ns 0.85 V 2 3 1 &3 4 4 FEATURES AND BENEFITS 1 VERY SMALL CONDUCTION LOSSES NEGLIGIBLE SWITCHING LOSSES LOW FORWARD AND REVERSE RECOVERY TIME HIGH SURGE CURRENT CAPABILITY SMD PACKAGE DESCRIPTION Single rectifier suited for switchmode power supply and high frequency DC to DC converters. Packaged in D2PAK, this surface mount device is intended for use in high frequency inverters, free wheeling and polarity protection applications. D2PAK (Plastic) ABSOLUTE MAXIMUM RATINGS Symbol VRRM IF(RMS) IF(AV) IFSM IFRM Tstg Tj Parameter Repetitive peak reverse voltage RMS forward current Average forward current Surge non repetitive forward current Repetitive peak forward current Storage and junction temperature range Tc=125C = 0.5 tp=10ms sinusoidal tp = 5s f = 5 kHz Value 200 50 25 200 310 - 40 to + 150 Unit V A A A A C August 1998 - Ed:3A 1/5 BYW77G-200 THERMAL RESISTANCE Symbol Rth (j-c) Junction to case Parameter Value 1 Unit C/W STATIC ELECTRICAL CHARACTERISTICS Symbol IR * Parameter Reverse leakage current Test Conditions VR = VRRM T j = 25C T j = 100C VF ** Forward voltage drop IF = 20 A IF = 40 A IF = 40 A Pulse test : * tp = 5 ms, < 2 % ** tp = 380 s, < 2 % Min. Typ. Max. 25 2.5 0.85 1.00 1.15 Unit A mA V T j = 125C Tj = 125C T j = 25C To evaluate the conduction losses use the following equation : P = 0.65 x IF(AV) + 0.0075 IF2(RMS) RECOVERY CHARACTERISTICS Symbol trr Parameter Reverse recovery time Test Conditions Tj = 25C Irr = 0.25 A Tj = 25C dIF/dt = -50A/s tfr Forward recovery time Peak forward voltage IF = 0.5A I R = 1A IF = 1A VR = 30V 10 V 1.5 Min. Typ. Max. 35 50 ns Unit ns Tj = 25C IF = 1A dIF/dt = 100A/s VFR = 1.1 x VF max Tj = 25C IF = 1A dIF/dt = 100A/s VFP PIN OUT configuration in D2PAK: 2/5 BYW77G-200 Fig.1 : Average forward power dissipation versus average forward current. P F(av)(W) =0.05 =0.1 =0.2 =0.5 =1 Fig.2 : Peak current versus form factor. 30.0 27.5 25.0 22.5 20.0 17.5 15.0 12.5 10.0 7.5 5.0 2.5 0.0 0 500 400 I M(A) T IM P=20W 300 T =tp/T tp 200 P=30W 100 IF(av)(A) =tp/T tp P=40W 5 10 15 20 25 30 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 Fig.3 : Forward voltage drop versus forward current (maximum values). VFM(V) Fig.4 : Relative variation of thermal impedance junction to case versus pulse duration. 1.0 K Zth(j-c) (tp. ) K= Rth(j-c) = 0.5 =0.2 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 IFM(A) Tj=125 oC 0.5 =0.1 T 0.2 Single pulse 0.1 1 10 100 300 0.1 1.0E-03 1.0E-02 tp(s) 1.0E-01 =tp/T tp 1. 0E+00 Fig.5 : Non repetitive surge peak forward current versus overload duration. IM(A) Fig.6 : Average current versus ambient temperature. ( = 0.5) I F(av)(A) Rth(j-a)=Rth(j-c) 300 250 200 150 100 30 25 =0.5 20 Tc=25 o C Tc=75 o C T 15 10 =tp/T Rth(j-a)=15 o C/W tp IM Tc=125 o C t =0.5 50 0 0.001 5 t(s) 0.01 0.1 1 0 0 20 40 Tamb(o C) 60 80 100 120 140 160 3/5 BYW77G-200 Fig.7 : Junction capacitance versus reverse voltage applied (Typical values). 200 190 180 170 160 150 140 130 120 11 0 100 1 Fig.8 : Reverse recovery charges versus dIF/dt. C(pF) F=1MHz Tj=25 oC 80 70 60 50 40 30 20 QRR(nC) 90%CONFIDENCE IF=IF(av) Tj=100 OC Tj=25 O C VR(V) 10 100 200 10 0 1 dIF/dt(A/s) 10 100 Fig.9 : Peak reverse current versus dIF/dt. Fig.10 : Dynamic parameters versus junction temperature. QRR;IRM[Tj]/QRR;IRM[Tj=125oC] 3.0 2.5 2.0 1.5 1.0 0.5 0.0 1 IRM(A) 90%CONFIDENCE 1.50 Tj=100 OC IF=IF(av) 1.25 1.00 IRM 0.75 QRR 0.50 Tj=25 O C 0.25 0.00 0 25 dIF/dt(A/s) 20 10 100 Tj( oC) 50 75 100 125 150 4/5 BYW77G-200 PACKAGE MECHANICAL DATA D2PAK (Plastic) DIMENSIONS A E L2 C2 REF. A A1 A2 D Millimeters Inches Min. Typ. Max. Min. Typ. Max. 4.30 2.49 0.03 0.70 1.25 0.45 1.21 8.95 10.00 4.88 15.00 1.27 1.40 0.40 0 8 0 1.40 4.60 0.169 2.69 0.098 0.23 0.001 0.93 0.027 0.181 0.106 0.009 0.037 B B2 C L L3 A1 B2 B G A2 2.0 MIN. FLAT ZONE V2 C R 0.049 0.055 0.60 0.017 0.024 1.36 0.047 9.35 0.352 10.28 0.393 5.28 0.192 15.85 0.590 1.40 0.050 1.75 0.055 0.016 8 0.054 0.368 0.405 0.208 0.624 0.055 0.069 C2 D E G L L2 L3 R V2 FOOT PRINT (in millimeters) 16.90 10.30 1.30 5.08 3.70 8.90 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsIbility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics (c) 1998 STMicroelectronics - Printed in Italy - All rights reserved. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Mexico - Morocco The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A. 5/5 |
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